Scientific Publications

WORD - Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applications

Both from a scalability and integration perspective, CMOS-based qubits hold great potential for quantum computing applications. However, current fabrication processes must be adapted to fit qubit requirements, implying a need for controlled process m onitoring to compare technological splits as well as toguarantee future process quality. The switch to isotopically enriched 28Si as a channel material is one such adaptation that requires deeper study. Here, we fabricate identical devices with 28Si and natural Si and present a comparison of their variable temperature transport characteristics using the Hall effect and split C-V. Once validated, we use the same 300mm process flow to fabricate 28Si quantum dots which, despite the addition of a second gate level, display state-of-the-art charge noise at 400mK.

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Quobly co-authors

Giselle Elbaz

Maud Vinet

CEO & co-founder

Tristan Meunier

CTO & co-founder

Bruna Cardoso Paz

All authors

G. Elbaz1, M. Cassé2, V. Labracherie2, G. Roussely2, B. Bertrand2, H. Niebojewski2, M. Vinet3, F. Balestro1, M. Urdampilleta1, T. Meunier1,3 and B. Cardoso Paz1